Kingston SNY1600S11-4G-EDEG 4GB vs Samsung M471B5273EB0-CK0 4GB

Punteggio complessivo

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Punteggio complessivo

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

Kingston SNY1600S11-4G-EDEG 4GB

Motivi da considerare
Kingston SNY1600S11-4G-EDEG 4GB

Al di sotto della latenza nei test PassMark, ns

29 40

Intorno 28% latenza inferiore

Samsung M471B5273EB0-CK0 4GB

Motivi da considerare
Samsung M471B5273EB0-CK0 4GB

Velocità di lettura più elevata, GB/s

12.3 9.4

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.9 5.1

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Kingston SNY1600S11-4G-EDEG 4GB

Samsung M471B5273EB0-CK0 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

29 40
Velocità di lettura, GB/s

9.4 12.3
Velocità di scrittura, GB/s

5.1 8.9
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

1432 1789

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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