PNY Electronics PNY 2GB vs Samsung T471A1K43CB1-CRC 8GB

Punteggio complessivo

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Punteggio complessivo

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

Differenze Specifiche tecniche Commenti

Differenze

PNY Electronics PNY 2GB

Motivi da considerare
PNY Electronics PNY 2GB

Velocità di scrittura più elevata, GB/s

8.4 6.5

Valore medio nei test

Samsung T471A1K43CB1-CRC 8GB

Motivi da considerare
Samsung T471A1K43CB1-CRC 8GB

Al di sotto della latenza nei test PassMark, ns

24 27

Intorno -13% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 10600

Intorno 1.81 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

PNY Electronics PNY 2GB

Samsung T471A1K43CB1-CRC 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

27 24
Velocità di lettura, GB/s

13.8 13.8
Velocità di scrittura, GB/s

8.4 6.5
Larghezza di banda della memoria, mbps

10600 19200

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

2274 1983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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