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Samsung M3 78T3354BZ0-CCC 256MB
Kingston HP24D4U7S8MD-8 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Kingston HP24D4U7S8MD-8 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Punteggio complessivo
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Kingston HP24D4U7S8MD-8 8GB

Kingston HP24D4U7S8MD-8 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T3354BZ0-CCC 256MB Motivi da considerare
Samsung M3 78T3354BZ0-CCC 256MB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    2 left arrow 14.2
    Valore medio nei test
Kingston HP24D4U7S8MD-8 8GB Motivi da considerare
Kingston HP24D4U7S8MD-8 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    30 left arrow 46
    Intorno -53% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    9.7 left arrow 1,519.2
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 3200
    Intorno 6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M3 78T3354BZ0-CCC 256MB
Kingston HP24D4U7S8MD-8 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR4
  • Latenza in PassMark, ns
    46 left arrow 30
  • Velocità di lettura, GB/s
    2,909.8 left arrow 14.2
  • Velocità di scrittura, GB/s
    1,519.2 left arrow 9.7
  • Larghezza di banda della memoria, mbps
    3200 left arrow 19200
Other
  • Descrizione
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    241 left arrow 2402

Samsung M3 78T3354BZ0-CCC 256MB Confronto tra le RAM

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Kingston HP24D4U7S8MD-8 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston HP24D4U7S8MD-8 8GB
Kingston HP24D4U7S8MD-8 8GB
Memoria RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information JM2400HSB-8G 8GB
Transcend Information JM2400HSB-8G 8GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3333C16-16GTZ 16GB
Memoria RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C17-16GTZKW 16GB
G Skill Intl F4-3600C17-16GTZKW 16GB
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Memoria RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Crucial Technology BL8G32C16U4WL.8FE 8GB
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Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
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Crucial Technology CT8G4SFRA266.M16FG 8GB
Memoria RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4000C18-16GTRG 16GB
G Skill Intl F4-4000C18-16GTRG 16GB
Memoria RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-16GTZNC 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
Memoria RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Memoria RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Memoria RAM