Samsung M3 78T3354BZ0-CCC 256MB vs SK Hynix HMA851S6DJR6N-XN 4GB

Punteggio complessivo

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Punteggio complessivo

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T3354BZ0-CCC 256MB

Motivi da considerare
Samsung M3 78T3354BZ0-CCC 256MB

Velocità di lettura più elevata, GB/s

2 14.9

Valore medio nei test

SK Hynix HMA851S6DJR6N-XN 4GB

Motivi da considerare
SK Hynix HMA851S6DJR6N-XN 4GB

Al di sotto della latenza nei test PassMark, ns

44 46

Intorno -5% latenza inferiore
Velocità di scrittura più elevata, GB/s

11.6 1,519.2

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

25600 3200

Intorno 8 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA851S6DJR6N-XN 4GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

46 44
Velocità di lettura, GB/s

2,909.8 14.9
Velocità di scrittura, GB/s

1,519.2 11.6
Larghezza di banda della memoria, mbps

3200 25600

Other

Descrizione

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Temporizzazioni / Velocità di clock

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Classifica PassMark (più sono, meglio è)

241 2191

RAM Latency Calculator

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RAM 2

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