Samsung M378B5273DH0-CH9 4GB vs Crucial Technology CT51264BD1339.M16F 4GB

Punteggio complessivo

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Punteggio complessivo

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5273DH0-CH9 4GB

Motivi da considerare
Samsung M378B5273DH0-CH9 4GB

Velocità di lettura più elevata, GB/s

13.3 12.1

Valore medio nei test

Crucial Technology CT51264BD1339.M16F 4GB

Motivi da considerare
Crucial Technology CT51264BD1339.M16F 4GB

Al di sotto della latenza nei test PassMark, ns

25 41

Intorno -64% latenza inferiore
Velocità di scrittura più elevata, GB/s

8.6 8.3

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5273DH0-CH9 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

41 25
Velocità di lettura, GB/s

13.3 12.1
Velocità di scrittura, GB/s

8.3 8.6
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

2176 2045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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