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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36JSF2G72PZ-1G6E1 16GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 36JSF2G72PZ-1G6E1 16GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Punteggio complessivo
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Micron Technology 36JSF2G72PZ-1G6E1 16GB

Micron Technology 36JSF2G72PZ-1G6E1 16GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B2G70BH0-CK0 16GB Motivi da considerare
Samsung M393B2G70BH0-CK0 16GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    9.2 left arrow 8.5
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.1 left arrow 5.5
    Valore medio nei test
Micron Technology 36JSF2G72PZ-1G6E1 16GB Motivi da considerare
Micron Technology 36JSF2G72PZ-1G6E1 16GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    39 left arrow 54
    Intorno -38% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36JSF2G72PZ-1G6E1 16GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    54 left arrow 39
  • Velocità di lettura, GB/s
    9.2 left arrow 8.5
  • Velocità di scrittura, GB/s
    8.1 left arrow 5.5
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2105 left arrow 1795

Samsung M393B2G70BH0-CK0 16GB Confronto tra le RAM

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology 36JSF2G72PZ-1G6E1 16GB Confronto tra le RAM

Crucial Technology BLS8G4D240FSEK.8FD 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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