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SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M378B5273CH0-CH9 4GB

SK Hynix HMT325U6CFR8C-H9 2GB vs Samsung M378B5273CH0-CH9 4GB

Punteggio complessivo
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SK Hynix HMT325U6CFR8C-H9 2GB

SK Hynix HMT325U6CFR8C-H9 2GB

Punteggio complessivo
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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT325U6CFR8C-H9 2GB Motivi da considerare
SK Hynix HMT325U6CFR8C-H9 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.6 left arrow 13.2
    Valore medio nei test
Samsung M378B5273CH0-CH9 4GB Motivi da considerare
Samsung M378B5273CH0-CH9 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    37 left arrow 39
    Intorno -5% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    8.4 left arrow 7.8
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M378B5273CH0-CH9 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    39 left arrow 37
  • Velocità di lettura, GB/s
    13.6 left arrow 13.2
  • Velocità di scrittura, GB/s
    7.8 left arrow 8.4
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1940 left arrow 2143

SK Hynix HMT325U6CFR8C-H9 2GB Confronto tra le RAM

Kingston 9965525-155.A00LF 8GB
Crucial Technology CT25664BA1339.M8FK 2GB

Samsung M378B5273CH0-CH9 4GB Confronto tra le RAM

Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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