SK Hynix HMT451S6DFR8A-PB 4GB vs Samsung M471B5173EB0-YK0 4GB

Punteggio complessivo

SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

Punteggio complessivo

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT451S6DFR8A-PB 4GB

Motivi da considerare
SK Hynix HMT451S6DFR8A-PB 4GB

Al di sotto della latenza nei test PassMark, ns

29 44

Intorno 34% latenza inferiore

Samsung M471B5173EB0-YK0 4GB

Motivi da considerare
Samsung M471B5173EB0-YK0 4GB

Velocità di lettura più elevata, GB/s

13 11.3

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.2 5.9

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

SK Hynix HMT451S6DFR8A-PB 4GB

Samsung M471B5173EB0-YK0 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

29 44
Velocità di lettura, GB/s

11.3 13.0
Velocità di scrittura, GB/s

5.9 8.2
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

1605 2069

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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