Strontium EVMT8G1600U86S 8GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Punteggio complessivo

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Punteggio complessivo

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Differenze Specifiche tecniche Commenti

Differenze

Strontium EVMT8G1600U86S 8GB

Motivi da considerare
Strontium EVMT8G1600U86S 8GB

Velocità di lettura più elevata, GB/s

11.7 11.1

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.2 6.1

Valore medio nei test

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Motivi da considerare
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Al di sotto della latenza nei test PassMark, ns

30 31

Intorno -3% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 12800

Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Strontium EVMT8G1600U86S 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

31 30
Velocità di lettura, GB/s

11.7 11.1
Velocità di scrittura, GB/s

7.2 6.1
Larghezza di banda della memoria, mbps

12800 17000

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

1990 1254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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