A-DATA Technology VDQVE1B16 2GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

総合得点

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

総合得点

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

相違点仕様コメント

相違点

A-DATA Technology VDQVE1B16 2GB

考慮すべき理由
A-DATA Technology VDQVE1B16 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 16.1

テスト平均値
書き込み速度の高速化、GB/s

2,061.2 11.9

テスト平均値

Micron Technology 4ATF1G64HZ-3G2B2 8GB

考慮すべき理由
Micron Technology 4ATF1G64HZ-3G2B2 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

39 46

周辺 -18% 低遅延
より高いメモリ帯域幅、mbps

25600 6400

周辺 4 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology VDQVE1B16 2GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 39
読み出し速度、GB/s

4,937.3 16.1
書き込み速度、GB/秒

2,061.2 11.9
メモリ帯域幅、mbps

6400 25600

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
タイミング / クロック速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

759 2782

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Avant Technology W6451U66J9266ND 4GB

Avant Technology W6451U66J9266ND 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Essencore Limited IM44GU48N21-FFFHM 4GB

Essencore Limited IM44GU48N21-FFFHM 4GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston 9905678-121.A00G 8GB

Kingston 9905678-121.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMK16GX4M2B2800C14 8GB

Corsair CMK16GX4M2B2800C14 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905734-063.A00G 32GB

Kingston 9905734-063.A00G 32GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB