ASint Technology SSA302G08-GGNHC 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

総合得点

ASint Technology SSA302G08-GGNHC 4GB

ASint Technology SSA302G08-GGNHC 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

相違点仕様コメント

相違点

ASint Technology SSA302G08-GGNHC 4GB

考慮すべき理由
ASint Technology SSA302G08-GGNHC 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 30

周辺 3% 低遅延
読み出し速度の高速化、GB/s

12.8 8.8

テスト平均値
書き込み速度の高速化、GB/s

8.9 5.6

テスト平均値
より高いメモリ帯域幅、mbps

12800 10600

周辺 1.21% 高帯域

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

バグを報告する

仕様

技術仕様の完全リスト

ASint Technology SSA302G08-GGNHC 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

29 30
読み出し速度、GB/s

12.8 8.8
書き込み速度、GB/秒

8.9 5.6
メモリ帯域幅、mbps

12800 10600

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
タイミング / クロック速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

2337 1344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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