Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

総合得点

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

バグを報告する

書き込み速度の高速化、GB/s

7.9 6.1

テスト平均値

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

考慮すべき理由
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 35

周辺 -17% 低遅延
読み出し速度の高速化、GB/s

11.1 9.8

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

35 30
読み出し速度、GB/s

9.8 11.1
書き込み速度、GB/秒

7.9 6.1
メモリ帯域幅、mbps

17000 17000

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2126 1254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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