Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Overall score
star star star star star
ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Differences

  • Faster write speed, GB/s
    7.9 left arrow 6.1
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    30 left arrow 35
    Around -17% lower latency
  • Faster reading speed, GB/s
    11.1 left arrow 9.8
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 30
  • Read speed, GB/s
    9.8 left arrow 11.1
  • Write speed, GB/s
    7.9 left arrow 6.1
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2126 left arrow 1254
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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