Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Micron Technology 18ASF2G72AZ-2G1B1 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

総合得点

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

バグを報告する

Micron Technology 18ASF2G72AZ-2G1B1 16GB

考慮すべき理由
Micron Technology 18ASF2G72AZ-2G1B1 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 35

周辺 -21% 低遅延
読み出し速度の高速化、GB/s

14.2 9.8

テスト平均値
書き込み速度の高速化、GB/s

8.9 7.9

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

35 29
読み出し速度、GB/s

9.8 14.2
書き込み速度、GB/秒

7.9 8.9
メモリ帯域幅、mbps

17000 17000

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2126 2909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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