Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB vs Samsung M471B5273DH0-CH9 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

総合得点

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 47

周辺 38% 低遅延
読み出し速度の高速化、GB/s

12 9.3

テスト平均値
書き込み速度の高速化、GB/s

8.1 5.9

テスト平均値

Samsung M471B5273DH0-CH9 4GB

考慮すべき理由
Samsung M471B5273DH0-CH9 4GB

バグを報告する

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Samsung M471B5273DH0-CH9 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

29 47
読み出し速度、GB/s

12.0 9.3
書き込み速度、GB/秒

8.1 5.9
メモリ帯域幅、mbps

10600 10600

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
タイミング / クロック速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

2171 1413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB

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Patriot Memory (PDP Systems) 3600 C20 Series 8GB

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