RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
ja
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

総合得点
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

総合得点
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

相違点 仕様 コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB 考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
バグを報告する
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB 考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
バグを報告する
  • PassMarkテストでのレイテンシー以下、ns
    26 left arrow 29
    周辺 -12% 低遅延
  • 読み出し速度の高速化、GB/s
    15.6 left arrow 13.4
    テスト平均値
  • 書き込み速度の高速化、GB/s
    11.8 left arrow 9.0
    テスト平均値
  • より高いメモリ帯域幅、mbps
    19200 left arrow 12800
    周辺 1.5 高帯域

仕様

技術仕様の完全リスト
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
主な特徴
  • メモリータイプ
    DDR3 left arrow DDR4
  • PassMarkにおけるレイテンシー、ns
    29 left arrow 26
  • 読み出し速度、GB/s
    13.4 left arrow 15.6
  • 書き込み速度、GB/秒
    9.0 left arrow 11.8
  • メモリ帯域幅、mbps
    12800 left arrow 19200
Other
  • 商品説明
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • タイミング / クロック速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • ランキングPassMark（多ければ多いほど良い）
    2423 left arrow 2382

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAMの比較

Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAMの比較

Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新の比較

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
メモリRAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
メモリRAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
メモリRAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-4000C18-32GTRS 32GB
G Skill Intl F4-4000C18-32GTRS 32GB
メモリRAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
メモリRAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-3466C16-16GTZR 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
メモリRAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
メモリRAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMH32GX4M2E3200C16 16GB
Corsair CMH32GX4M2E3200C16 16GB
メモリRAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
メモリRAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
メモリRAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
メモリRAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
メモリRAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
メモリRAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
メモリRAM