Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs DSL Memory CIR-W4SUSS2408G 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

DSL Memory CIR-W4SUSS2408G 8GB

考慮すべき理由
DSL Memory CIR-W4SUSS2408G 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

22 24

周辺 -9% 低遅延
読み出し速度の高速化、GB/s

17.6 16

テスト平均値
書き込み速度の高速化、GB/s

13.2 12.5

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

DSL Memory CIR-W4SUSS2408G 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 22
読み出し速度、GB/s

16.0 17.6
書き込み速度、GB/秒

12.5 13.2
メモリ帯域幅、mbps

19200 19200

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2925 3024

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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