Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Essencore Limited KD44GU481-26N1600 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 71

周辺 66% 低遅延
読み出し速度の高速化、GB/s

16 15.1

テスト平均値
書き込み速度の高速化、GB/s

12.5 8.2

テスト平均値

Essencore Limited KD44GU481-26N1600 4GB

考慮すべき理由
Essencore Limited KD44GU481-26N1600 4GB

バグを報告する

より高いメモリ帯域幅、mbps

21300 19200

周辺 1.11 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Essencore Limited KD44GU481-26N1600 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 71
読み出し速度、GB/s

16.0 15.1
書き込み速度、GB/秒

12.5 8.2
メモリ帯域幅、mbps

19200 21300

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2925 1813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston ACR26D4U9D8MH-16 16GB

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Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

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Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Kingston 9932291-002.A00G 4GB

Kingston 9932291-002.A00G 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

A-DATA Technology AO2P24HCST2-BTCS 16GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Samsung M393A4K40CB1-CRC 32GB

Samsung M393A4K40CB1-CRC 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology CT25664BA1339.D8FE 2GB

Crucial Technology CT25664BA1339.D8FE 2GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Corsair CMK16GX4M2C3333C16 8GB

Corsair CMK16GX4M2C3333C16 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB