Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C15-8GTZ 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 25

周辺 4% 低遅延
より高いメモリ帯域幅、mbps

19200 17000

周辺 1.13% 高帯域

G Skill Intl F4-3600C15-8GTZ 8GB

考慮すべき理由
G Skill Intl F4-3600C15-8GTZ 8GB

バグを報告する

読み出し速度の高速化、GB/s

19.7 16

テスト平均値
書き込み速度の高速化、GB/s

17.5 12.5

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3600C15-8GTZ 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 25
読み出し速度、GB/s

16.0 19.7
書き込み速度、GB/秒

12.5 17.5
メモリ帯域幅、mbps

19200 17000

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2925 3917

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMK16GX4M4A2666C15 4GB

Corsair CMK16GX4M4A2666C15 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

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G Skill Intl F4-3600C18-8GTZR 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMH32GX4M2D3600C18 16GB

Corsair CMH32GX4M2D3600C18 16GB

A-DATA Technology DDR3 2600 2OZ 8GB

A-DATA Technology DDR3 2600 2OZ 8GB

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Essencore Limited KD48GU880-32A160X 8GB

Essencore Limited KD48GU880-32A160X 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK64GX4M82800C14 8GB

Corsair CMK64GX4M82800C14 8GB