Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

相違点仕様コメント

相違点

Nanya Technology M2F8G64CB8HC9N-DI 8GB

考慮すべき理由
Nanya Technology M2F8G64CB8HC9N-DI 8GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 37

周辺 -54% 低遅延
読み出し速度の高速化、GB/s

16 13.9

テスト平均値
書き込み速度の高速化、GB/s

12.5 8.6

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

37 24
読み出し速度、GB/s

13.9 16.0
書き込み速度、GB/秒

8.6 12.5
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2395 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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