Samsung M378A5244CB0-CTD 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

総合得点

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

相違点仕様コメント

相違点

Samsung M378A5244CB0-CTD 4GB

考慮すべき理由
Samsung M378A5244CB0-CTD 4GB

バグを報告する

読み出し速度の高速化、GB/s

15.8 15.6

テスト平均値
書き込み速度の高速化、GB/s

11.8 11.3

テスト平均値
より高いメモリ帯域幅、mbps

21300 17000

周辺 1.25% 高帯域

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 36

周辺 -33% 低遅延

仕様

技術仕様の完全リスト

Samsung M378A5244CB0-CTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

36 27
読み出し速度、GB/s

15.8 15.6
書き込み速度、GB/秒

11.8 11.3
メモリ帯域幅、mbps

21300 17000

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2497 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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