Samsung M378B5673EH1-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

総合得点

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

相違点仕様コメント

相違点

Samsung M378B5673EH1-CF8 2GB

考慮すべき理由
Samsung M378B5673EH1-CF8 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 33

周辺 15% 低遅延
読み出し速度の高速化、GB/s

12.7 11.6

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

バグを報告する

書き込み速度の高速化、GB/s

8.3 7.5

テスト平均値
より高いメモリ帯域幅、mbps

19200 8500

周辺 2.26 高帯域

仕様

技術仕様の完全リスト

Samsung M378B5673EH1-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 33
読み出し速度、GB/s

12.7 11.6
書き込み速度、GB/秒

7.5 8.3
メモリ帯域幅、mbps

8500 19200

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1988 2227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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