Samsung M393B2G70BH0-CH9 16GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

総合得点

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

総合得点

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

相違点仕様コメント

相違点

Samsung M393B2G70BH0-CH9 16GB

考慮すべき理由
Samsung M393B2G70BH0-CH9 16GB

バグを報告する

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

考慮すべき理由
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 33

周辺 -14% 低遅延
読み出し速度の高速化、GB/s

22.8 8

テスト平均値
書き込み速度の高速化、GB/s

16.9 7.3

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Samsung M393B2G70BH0-CH9 16GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

33 29
読み出し速度、GB/s

8.0 22.8
書き込み速度、GB/秒

7.3 16.9
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1911 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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