Samsung M395T2863QZ4-CF76 1GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

総合得点

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

総合得点

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

相違点仕様コメント

相違点

Samsung M395T2863QZ4-CF76 1GB

考慮すべき理由
Samsung M395T2863QZ4-CF76 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 16.8

テスト平均値
書き込み速度の高速化、GB/s

2,404.5 13.7

テスト平均値

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

考慮すべき理由
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 104

周辺 -197% 低遅延
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Samsung M395T2863QZ4-CF76 1GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

104 35
読み出し速度、GB/s

3,192.0 16.8
書き込み速度、GB/秒

2,404.5 13.7
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

786 3306

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Kingston 99U5403-036.A00G 4GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

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Kingston 9905471-006.A00LF 4GB

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Corsair CMV8GX4M1A2133C15 8GB

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Crucial Technology 8G4US2400.M8B1 8GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB