A-DATA Technology DQKD1A08 1GB vs Kingston ACR32D4U2S8ME-16 16GB

Pontuação geral

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Pontuação geral

Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB

Diferenças Especificações Comentários

Diferenças

A-DATA Technology DQKD1A08 1GB

Razões a considerar
A-DATA Technology DQKD1A08 1GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

2 17.2

Valor médio nos testes

Kingston ACR32D4U2S8ME-16 16GB

Razões a considerar
Kingston ACR32D4U2S8ME-16 16GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

34 52

Por volta de -53% menor latência
Velocidade de escrita mais rápida, GB/s

12.1 1,145.9

Valor médio nos testes
Maior largura de banda de memória, mbps

25600 4200

Por volta de 6.1 maior largura de banda

Especificações

Lista completa de especificações técnicas

A-DATA Technology DQKD1A08 1GB

Kingston ACR32D4U2S8ME-16 16GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

52 34
Velocidade de leitura, GB/s

2,614.5 17.2
Velocidade de escrita, GB/s

1,145.9 12.1
Largura de banda de memória, mbps

4200 25600

Other

Descrição

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Tempos / Velocidade do relógio

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (Quanto mais, melhor)

409 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Últimas comparações

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung SF4641G8CKHI6DFSDS 8GB

Samsung SF4641G8CKHI6DFSDS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD32GX4M4B3200C16 8GB

Corsair CMD32GX4M4B3200C16 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology C 8GB

Crucial Technology C 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CM4B8G4J2400A16K2-ON 8GB

Corsair CM4B8G4J2400A16K2-ON 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB