Samsung M3 78T2953EZ3-CF7 1GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB

Pontuação geral

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Pontuação geral

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 78T2953EZ3-CF7 1GB

Razões a considerar
Samsung M3 78T2953EZ3-CF7 1GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

4 17.7

Valor médio nos testes

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Razões a considerar
SK Hynix V-GeN D4H4GL26A8TL5 4GB

Relatar um erro

Velocidade de escrita mais rápida, GB/s

9.3 1,950.7

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 6400

Por volta de 3 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 78T2953EZ3-CF7 1GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

58 58
Velocidade de leitura, GB/s

4,241.0 17.7
Velocidade de escrita, GB/s

1,950.7 9.3
Largura de banda de memória, mbps

6400 19200

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

651 1968

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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