Samsung M3 78T2953EZ3-CF7 1GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB

Punteggio complessivo

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Punteggio complessivo

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T2953EZ3-CF7 1GB

Motivi da considerare
Samsung M3 78T2953EZ3-CF7 1GB

Velocità di lettura più elevata, GB/s

4 17.7

Valore medio nei test

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Motivi da considerare
SK Hynix V-GeN D4H4GL26A8TL5 4GB

Velocità di scrittura più elevata, GB/s

9.3 1,950.7

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

19200 6400

Intorno 3 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M3 78T2953EZ3-CF7 1GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

58 58
Velocità di lettura, GB/s

4,241.0 17.7
Velocità di scrittura, GB/s

1,950.7 9.3
Larghezza di banda della memoria, mbps

6400 19200

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

651 1968

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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