Samsung M3 78T3354BZ0-CCC 256MB vs Teikon TMA81GU6AFR8N-UHSC 8GB

Pontuação geral

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Pontuação geral

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 78T3354BZ0-CCC 256MB

Razões a considerar
Samsung M3 78T3354BZ0-CCC 256MB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

2 16.5

Valor médio nos testes

Teikon TMA81GU6AFR8N-UHSC 8GB

Razões a considerar
Teikon TMA81GU6AFR8N-UHSC 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

30 46

Por volta de -53% menor latência
Velocidade de escrita mais rápida, GB/s

12.1 1,519.2

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 3200

Por volta de 6 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 78T3354BZ0-CCC 256MB

Teikon TMA81GU6AFR8N-UHSC 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

46 30
Velocidade de leitura, GB/s

2,909.8 16.5
Velocidade de escrita, GB/s

1,519.2 12.1
Largura de banda de memória, mbps

3200 19200

Other

Descrição

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

241 2969

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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