Samsung M3 78T3354BZ0-CCC 256MB vs Teikon TMA81GU6AFR8N-UHSC 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16.5

测试中的平均数值

Teikon TMA81GU6AFR8N-UHSC 8GB

需要考虑的原因
Teikon TMA81GU6AFR8N-UHSC 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

12.1 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Teikon TMA81GU6AFR8N-UHSC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

2,909.8 16.5
写入速度，GB/s

1,519.2 12.1
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2969

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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A-DATA Technology AO2P24HC8T1-BTBS 8GB

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Kingston KHX3200C18D4/8G 8GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9905403-134.A00LF 2GB

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Kingston 99U5469-045.A00LF 4GB

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Samsung M393A5143DB0-CRC 4GB

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Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB