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Samsung M395T2863QZ4-CF76 1GB
Samsung M393A2K43DB3-CWE 16GB

Samsung M395T2863QZ4-CF76 1GB vs Samsung M393A2K43DB3-CWE 16GB

Pontuação geral
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Pontuação geral
star star star star star
Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

Diferenças Especificações Comentários

Diferenças

Samsung M395T2863QZ4-CF76 1GB Razões a considerar
Samsung M395T2863QZ4-CF76 1GB
Relatar um erro
  • Velocidade de leitura mais rápida, GB/s
    3 left arrow 10.3
    Valor médio nos testes
Samsung M393A2K43DB3-CWE 16GB Razões a considerar
Samsung M393A2K43DB3-CWE 16GB
Relatar um erro
  • Abaixo da latência nos testes do PassMark, ns
    53 left arrow 104
    Por volta de -96% menor latência
  • Velocidade de escrita mais rápida, GB/s
    7.7 left arrow 2,404.5
    Valor médio nos testes
  • Maior largura de banda de memória, mbps
    25600 left arrow 6400
    Por volta de 4 maior largura de banda

Especificações

Lista completa de especificações técnicas
Samsung M395T2863QZ4-CF76 1GB
Samsung M393A2K43DB3-CWE 16GB
Características principais
  • Tipo de memória
    DDR2 left arrow DDR4
  • Latência em PassMark, ns
    104 left arrow 53
  • Velocidade de leitura, GB/s
    3,192.0 left arrow 10.3
  • Velocidade de escrita, GB/s
    2,404.5 left arrow 7.7
  • Largura de banda de memória, mbps
    6400 left arrow 25600
Other
  • Descrição
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Tempos / Velocidade do relógio
    no data left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (Quanto mais, melhor)
    786 left arrow 2356

Samsung M395T2863QZ4-CF76 1GB Comparações de RAM

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Samsung M393A2K43DB3-CWE 16GB Comparações de RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Últimas comparações

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
Memória RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C19-8GSXK 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
Memória RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Memória RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Memória RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Transcend Information JM3200HLG-8G 8GB
Transcend Information JM3200HLG-8G 8GB
Memória RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9965600-027.A00G 16GB
Kingston 9965600-027.A00G 16GB
Memória RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK64GX4M4B3600C18 16GB
Corsair CMK64GX4M4B3600C18 16GB
Memória RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Memória RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
Memória RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Memória RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Memória RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Memória RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
Memória RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Memória RAM