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A-DATA Technology AD73I1B1672EG 2GB
AMD R7S44G2606U1S 4GB

A-DATA Technology AD73I1B1672EG 2GB vs AMD R7S44G2606U1S 4GB

总分
star star star star star
A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分
star star star star star
AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

差异 规格 评论

差异

A-DATA Technology AD73I1B1672EG 2GB 需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB
报告一个错误
AMD R7S44G2606U1S 4GB 需要考虑的原因
AMD R7S44G2606U1S 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 26
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1B1672EG 2GB
AMD R7S44G2606U1S 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 20
  • 读取速度，GB/s
    12.2 left arrow 18.9
  • 写入速度，GB/s
    8.5 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1677 left arrow 2707

A-DATA Technology AD73I1B1672EG 2GB RAM的比较

Kingston ACR16D3LFS1KBG/2G 2GB
Kingston 9905702-029.A00G 8GB

AMD R7S44G2606U1S 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
AMD R7S44G2606U1S 4GB
AMD R7S44G2606U1S 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Samsung SH5724G4UNC26P2-SC 32GB
Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Transcend Information JM3200HLB-16G 16GB
Transcend Information JM3200HLB-16G 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905702-082.A00G 8GB
Kingston 9905702-082.A00G 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
内存RAM
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Kingston 9905701-018.A00G 16GB
Kingston 9905701-018.A00G 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM