A-DATA Technology AD73I1B1672EG 2GB vs G Skill Intl F4-3000C16-8GTRS 8GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

G Skill Intl F4-3000C16-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GTRS 8GB

报告一个错误

更快的读取速度，GB/s

17.2 12.2

测试中的平均数值
更快的写入速度，GB/s

13.5 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-3000C16-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

12.2 17.2
写入速度，GB/s

8.5 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1677 3401

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393A4K40BB0-CPB 32GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

Kingston KHX318C10FR/8G 8GB

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Micron Technology 16G3200CL22 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT16G4SFD824A.C16FBR 16GB

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Samsung M393A1G40EB1-CRC 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F4-3200C16-16GFX 16GB

Samsung M378B5673FH0-CH9 2GB

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Corsair CMD16GX4M2B3733C17 8GB

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Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB