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A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB

A-DATA Technology AD73I1C1674EV 4GB vs Crucial Technology BL16G26C16S4B.16FD 16GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Crucial Technology BL16G26C16S4B.16FD 16GB

Crucial Technology BL16G26C16S4B.16FD 16GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
Crucial Technology BL16G26C16S4B.16FD 16GB 需要考虑的原因
Crucial Technology BL16G26C16S4B.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 40
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 36
  • 读取速度，GB/s
    11.3 left arrow 16.3
  • 写入速度，GB/s
    7.5 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 3044

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Crucial Technology BL16G26C16S4B.16FD 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
A-DATA Technology AD73I1C1674EV 4GB
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Crucial Technology BL16G26C16S4B.16FD 16GB
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内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
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ASint Technology SSA302G08-EGN1C 4GB
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内存RAM
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Ramaxel Technology RMR5040ED58E9W1600 4GB
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内存RAM
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内存RAM
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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Samsung T471A1K43CB1-CRC 8GB
内存RAM