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A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB

A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-3200C14-8GTZRX 8GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
G Skill Intl F4-3200C14-8GTZRX 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTZRX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 40
    左右 -82% 更低的延时
  • 更快的读取速度，GB/s
    20.3 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 22
  • 读取速度，GB/s
    11.3 left arrow 20.3
  • 写入速度，GB/s
    7.5 left arrow 17.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 4116

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

G Skill Intl F4-3200C14-8GTZRX 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
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A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
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Micron Technology 16ATF1G64AZ-2G1A1 8GB
内存RAM