RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology ADOVE1A0834E 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
比较
A-DATA Technology ADOVE1A0834E 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
A-DATA Technology ADOVE1A0834E 1GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
94
左右 -327% 更低的延时
更快的读取速度,GB/s
17.7
1
测试中的平均数值
更快的写入速度,GB/s
12.7
1,165.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
94
22
读取速度,GB/s
1,882.0
17.7
写入速度,GB/s
1,165.4
12.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
305
3075
A-DATA Technology ADOVE1A0834E 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology 78.01G86.9H50C 1GB
Kllisre M378A1K43BB2-CRC 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73DX0-YK0 8GB
Kingston 9905403-038.A00LF 4GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 99U5712-009.A00G 16GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Samsung M378B5673EH1-CF8 2GB
Golden Empire CL16-16-16 D4-2400 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905668-001.A00G 8GB
Corsair VS1GB800D2 1GB
Kingston KF2666C13D4/8GX 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMD32GX4M4B3333C16 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C16-16GTRSA 16GB
TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology CB4GU2400.M8E 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SpecTek Incorporated 16G2666CL19 16GB
报告一个错误
×
Bug description
Source link