A-DATA Technology AM2L16BC4R1-B0CS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 60

左右 57% 更低的延时
更快的读取速度，GB/s

9.8 7.8

测试中的平均数值
更快的写入速度，GB/s

4.6 2.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 60
读取速度，GB/s

9.8 7.8
写入速度，GB/s

4.6 2.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1560 1505

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B1G73DB0-YK0 8GB

Mushkin 99[2/7/4]204[F/T] 4GB

Mushkin 99[2/7/4]204[F/T] 4GB

Samsung M471B5273DH0-CH9 4GB

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Corsair CMK32GX4M4C3400C16 8GB

Corsair CMK32GX4M4C3400C16 8GB

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Samsung M378B5673FH0-CH9 2GB

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Crucial Technology CT16G4SFD824A.M16FA 16GB

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G Skill Intl F4-2800C16-4GRK 4GB