RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology AM2U16BC4P2-B05B 4GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
比较
A-DATA Technology AM2U16BC4P2-B05B 4GB vs Chun Well Technology Holding Limited MD4U0836165BCW 8GB
总分
A-DATA Technology AM2U16BC4P2-B05B 4GB
总分
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
31
左右 16% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
报告一个错误
更快的读取速度,GB/s
21.4
14
测试中的平均数值
更快的写入速度,GB/s
16.2
9.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
31
读取速度,GB/s
14.0
21.4
写入速度,GB/s
9.1
16.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2330
3809
A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较
Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905734-063.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Kingston 9905702-017.A00G 8GB
Mushkin 991586 2GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
AMD R5316G1609U2K 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CM4X4GD3000C16K2 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C16-8GTRS 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Samsung M471B5173DB0-YK0 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Samsung M393A2K43BB1-CPB 16GB
Kingston 99U5403-036.A00G 4GB
Kingston 99U5624-003.A00G 8GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
报告一个错误
×
Bug description
Source link