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A-DATA Technology AO2P26KC8T1-BPYS 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB vs Crucial Technology CT8G4DFS8266.M8FD 8GB

总分
star star star star star
A-DATA Technology AO2P26KC8T1-BPYS 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

总分
star star star star star
Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

差异 规格 评论

差异

A-DATA Technology AO2P26KC8T1-BPYS 8GB 需要考虑的原因
A-DATA Technology AO2P26KC8T1-BPYS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 12% 更低的延时
Crucial Technology CT8G4DFS8266.M8FD 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.3 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.4
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology AO2P26KC8T1-BPYS 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 33
  • 读取速度，GB/s
    15.4 left arrow 16.3
  • 写入速度，GB/s
    8.4 left arrow 10.8
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2513 left arrow 2795

A-DATA Technology AO2P26KC8T1-BPYS 8GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFS8266.M8FD 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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