A-DATA Technology AO2P32NC8W1-BD3SHC 8GB vs SK Hynix GKE160UD102408-2400 16GB

总分

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

总分

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

差异规格评论

差异

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

需要考虑的原因
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 71

左右 37% 更低的延时
更快的写入速度，GB/s

11.1 8.9

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

SK Hynix GKE160UD102408-2400 16GB

需要考虑的原因
SK Hynix GKE160UD102408-2400 16GB

报告一个错误

更快的读取速度，GB/s

15.5 14.7

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

SK Hynix GKE160UD102408-2400 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

45 71
读取速度，GB/s

14.7 15.5
写入速度，GB/s

11.1 8.9
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2556 1986

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix GKE160UD102408-2400 16GB

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Samsung M378A1K43EB2-CWE 8GB

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Kingston 9905734-082.A00G 16GB

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston LV32D4S2S8HD-8 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

Wilk Elektronik S.A. IR2133D464L15S/4G 4GB