Samsung M393B5170FH0-CK0 4GB vs Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

需要考虑的原因
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

17.2 11.8

测试中的平均数值
更快的写入速度，GB/s

12.4 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

11.8 17.2
写入速度，GB/s

7.3 12.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 3035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5170FH0-CK0 4GB

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Samsung M471B5173DB0-YK0 4GB

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Micron Technology 18ASF1G72PDZ-2G1B1 8GB

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Kingston 99U5584-007.A00LF 4GB

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Avant Technology W6451U66J5213ND 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M378B5173BH0-CH9 4GB

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SK Hynix HMT41GU6BFR8A-PB 8GB

SK Hynix HMT41GU6BFR8A-PB 8GB