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A-DATA Technology DDR2 800G 2GB
Kingston 9905744-023.A00G 16GB
比较
A-DATA Technology DDR2 800G 2GB vs Kingston 9905744-023.A00G 16GB
总分
A-DATA Technology DDR2 800G 2GB
总分
Kingston 9905744-023.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DDR2 800G 2GB
报告一个错误
更快的读取速度,GB/s
5
15.3
测试中的平均数值
更快的写入速度,GB/s
2,343.1
12.2
测试中的平均数值
需要考虑的原因
Kingston 9905744-023.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
49
左右 -40% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DDR2 800G 2GB
Kingston 9905744-023.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
49
35
读取速度,GB/s
5,135.8
15.3
写入速度,GB/s
2,343.1
12.2
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
843
2640
A-DATA Technology DDR2 800G 2GB RAM的比较
Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB
Kingston 9905744-023.A00G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325U6CFR8C-PB 2GB
Neo Forza NMUD480E82-2666 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BL16G32C16U4R.16FE 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
A-DATA Technology DDR2 800G 2GB
Kingston 9905744-023.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3400C16-16GVK 16GB
Kingston ACR512X64D3S13C9G 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Kingston 9905403-011.A03LF 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB
EVGA 16G-D3-1600-MR 8GB
Samsung M378B1G73BH0-CK0 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMW32GX4M4C3600C18 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
报告一个错误
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Bug description
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