Samsung M395T2863QZ4-CF76 1GB vs Kllisre M378A1K43BB2-CRC 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 11

测试中的平均数值

Kllisre M378A1K43BB2-CRC 8GB

需要考虑的原因
Kllisre M378A1K43BB2-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

48 104

左右 -117% 更低的延时
更快的写入速度，GB/s

7.7 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kllisre M378A1K43BB2-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 48
读取速度，GB/s

3,192.0 11.0
写入速度，GB/s

2,404.5 7.7
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Teikon TMA851S6CJR6N-VKSC 4GB

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SpecTek Incorporated ?????????????????? 2GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M378A1K43BB2-CTD 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston KHX2133C14D4/4G 4GB

Kingston KHX2133C14D4/4G 4GB