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A-DATA Technology DDR2 800G 2GB
Samsung V-GeN D4S4GL32A8TL 4GB

A-DATA Technology DDR2 800G 2GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

A-DATA Technology DDR2 800G 2GB 需要考虑的原因
A-DATA Technology DDR2 800G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 58
    左右 16% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 18.5
    测试中的平均数值
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.5 left arrow 2,343.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR2 800G 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 58
  • 读取速度，GB/s
    5,135.8 left arrow 18.5
  • 写入速度，GB/s
    2,343.1 left arrow 9.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    843 left arrow 1998

A-DATA Technology DDR2 800G 2GB RAM的比较

Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Hyundai Inc AR36C18S8K2HU416R 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMT64GX4M8X3000C15 8GB
Corsair CMT64GX4M8X3000C15 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2133C15-8GRR 8GB
G Skill Intl F4-2133C15-8GRR 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F4-2666C18-8GRS 8GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4X16GC3600C18K2D 16GB
Corsair CM4X16GC3600C18K2D 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Kingston HP32D4U8D8HC-16XR 16GB
Kingston HP32D4U8D8HC-16XR 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
内存RAM