A-DATA Technology DOVF1B163G2G 2GB vs AMD R744G2400U1S 4GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值

AMD R744G2400U1S 4GB

需要考虑的原因
AMD R744G2400U1S 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 56

左右 -155% 更低的延时
更快的写入速度，GB/s

11.6 1,925.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

AMD R744G2400U1S 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 22
读取速度，GB/s

4,315.2 16.7
写入速度，GB/s

1,925.7 11.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

658 2862

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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V-GEN D4H8GL26A8TS6 8GB

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G Skill Intl F4-3466C16-16GTZ 16GB

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Crucial Technology CT102464BF160B-16F 8GB

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Kingston KHX3200C18D4/16G 16GB

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G Skill Intl F4-3200C16-16GTZRX 16GB

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Samsung M471A2G43BB2-CWE 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Corsair CMH16GX4M2Z3600C18 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Patriot Memory (PDP Systems) 4000 C20 Series 8GB

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Kingston MSI24D4S7D8MHMH6 16GB

Samsung M471B5273DH0-CH9 4GB

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Samsung M471B5273DH0-YK0 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB