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A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
比较
A-DATA Technology DOVF1B163G2G 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
总分
A-DATA Technology DOVF1B163G2G 2GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
更快的读取速度,GB/s
4
12.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
56
左右 -133% 更低的延时
更快的写入速度,GB/s
6.3
1,925.7
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
56
24
读取速度,GB/s
4,315.2
12.7
写入速度,GB/s
1,925.7
6.3
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
658
2256
A-DATA Technology DOVF1B163G2G 2GB RAM的比较
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB RAM的比较
Samsung M323R2GA3BB0-CQKOD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Kingston 9965516-112.A00LF 16GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston HP26D4S9S8MHF-8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Kingston KHX2133C11D3/4GX 4GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Samsung M471B5273CH0-CH9 4GB
Samsung M393A1K43BB0-CRC 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology DDR4 2666 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905734-082.A00G 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Kingston 9905403-134.A00LF 2GB
Corsair CMW64GX4M4K3600C18 16GB
Kingston KVR16N11/8-SP 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
报告一个错误
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Bug description
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