A-DATA Technology DOVF1B163G2G 2GB vs Samsung M393A5143DB0-CRC 4GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 10

测试中的平均数值

Samsung M393A5143DB0-CRC 4GB

需要考虑的原因
Samsung M393A5143DB0-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

47 56

左右 -19% 更低的延时
更快的写入速度，GB/s

7.5 1,925.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Samsung M393A5143DB0-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 47
读取速度，GB/s

4,315.2 10.0
写入速度，GB/s

1,925.7 7.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

658 2308

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston MSI24D4S7S7MH-16 16GB

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Kingston 9905403-061.A00LF 2GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Samsung M395T2863QZ4-CF76 1GB

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PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

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Kingston ACR16D3LS1KNG/4G 4GB

King Tiger Technology Tigo-2133Mhz-8G 8GB

King Tiger Technology Tigo-2133Mhz-8G 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston KHX3600C17D4/16GX 16GB

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Kingston 99U5428-046.A00LF 4GB

Kingston 99U5428-046.A00LF 4GB

SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB