Samsung 1600 CL10 Series 8GB vs Kingston KV0M5R-HYD 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 48

左右 48% 更低的延时
更快的读取速度，GB/s

16.1 13.3

测试中的平均数值
更快的写入速度，GB/s

10.1 8.5

测试中的平均数值

Kingston KV0M5R-HYD 8GB

需要考虑的原因
Kingston KV0M5R-HYD 8GB

报告一个错误

更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston KV0M5R-HYD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 48
读取速度，GB/s

16.1 13.3
写入速度，GB/s

10.1 8.5
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 2398

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB