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A-DATA Technology DQKD1A08 1GB
Chun Well Technology Holding Limited D4U0830160B 8GB
比较
A-DATA Technology DQKD1A08 1GB vs Chun Well Technology Holding Limited D4U0830160B 8GB
总分
A-DATA Technology DQKD1A08 1GB
总分
Chun Well Technology Holding Limited D4U0830160B 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
更快的读取速度,GB/s
2
17.4
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited D4U0830160B 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
52
左右 -63% 更低的延时
更快的写入速度,GB/s
12.5
1,145.9
测试中的平均数值
更高的内存带宽,mbps
21300
4200
左右 5.07 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Chun Well Technology Holding Limited D4U0830160B 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
52
32
读取速度,GB/s
2,614.5
17.4
写入速度,GB/s
1,145.9
12.5
内存带宽,mbps
4200
21300
Other
描述
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
4-4-4-12 / 533 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
409
3137
A-DATA Technology DQKD1A08 1GB RAM的比较
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB
Chun Well Technology Holding Limited D4U0830160B 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF548C38-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M393B1K70QB0-CK0 8GB
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EXCELERAM D48G8G8H8SS9CJRB22 8GB
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G Skill Intl F4-3200C16-8GTZKW 8GB
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Kingston 9905403-090.A01LF 4GB
Kingston KHX2133C13D4/4GX 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMK64GX4M8A2133C13 8GB
Corsair CMZ16GX3M2A2400C10 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
SK Hynix DDR2 800 2G 2GB
Samsung M378A2G43MX3-CTD 16GB
报告一个错误
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Bug description
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