A-DATA Technology DQKD1A08 1GB vs Corsair CM4X16GC3200C16K4 16GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Corsair CM4X16GC3200C16K4 16GB

Corsair CM4X16GC3200C16K4 16GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 17.2

测试中的平均数值

Corsair CM4X16GC3200C16K4 16GB

需要考虑的原因
Corsair CM4X16GC3200C16K4 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 52

左右 -73% 更低的延时
更快的写入速度，GB/s

14.6 1,145.9

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Corsair CM4X16GC3200C16K4 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 30
读取速度，GB/s

2,614.5 17.2
写入速度，GB/s

1,145.9 14.6
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

409 3592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Crucial Technology BL8G32C16U4BL.M8FE1 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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G Skill Intl F4-3200C16-8GTZRN 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

Crucial Technology BL8G30C15U4B.M8FE 8GB