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Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3000C14-8GVR 8GB

Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3000C14-8GVR 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
G Skill Intl F4-3000C14-8GVR 8GB 需要考虑的原因
G Skill Intl F4-3000C14-8GVR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 25
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3000C14-8GVR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 20
  • 读取速度，GB/s
    16.1 left arrow 18.2
  • 写入速度，GB/s
    10.1 left arrow 14.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3359

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3000C14-8GVR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung 1600 CL10 Series 8GB
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内存RAM
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内存RAM
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内存RAM
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Kingston KVT8FP-HYC 4GB
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Essencore Limited KD4AGS88A-26N1600 16GB
内存RAM